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Investigations on Ta2O5/ZnO insulator-semiconductor interfaces

Authors: Nandi, SK; Choi, WK; Noh, YS; Oh, MS; Maikap, S; Hwang, NM; Kim, DY; Chatterjee, S; Samanta, SK; Maiti, CK

Issue Date: 2002-10-24

Publisher: IEE-INST ELEC ENG

Citation: ELECTRONICS LETTERS, v.38, no.22, pp.1390 - 1392

Abstract: The electrical and interfacial properties of Ta2O5/ZnO/p-Si metal-insulator-semiconductor structures are investigated using high frequency capacitance-voltage and conductance-voltage characteristics. Charge trapping behaviour under Fowler-Nordheim constant current stressing is also reported. An interface state density (1.22 x 10(12) cm(-2) eV(-1)) has been observed for the Ta2O5/ZnO interface.

Keywords: ZNO THIN-FILMS; SI; GROWTH; ZNO THIN-FILMS; SI; GROWTH; ZnO; Ta2O5/ZnO; MIS structure; C-V

ISSN: 0013-5194

URI: https://pubs.kist.re.kr/handle/201004/139121

DOI: 10.1049/el:20020944

Appears in Collections:: KIST Article > 2002

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