Showing results 1 to 7 of 7
Issue Date | Title | Author(s) |
---|---|---|
2019-03-01 | 1.3-mu m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon | Duan, Jianan; Huang, Heming; Dong, Bozhang; Jung, Daehwan; Norman, Justin C.; Bowers, John E.; Grillot, Frederic |
2019-04 | A Review of High-Performance Quantum Dot Lasers on Silicon | Norman, Justin C.; Jung, Daehwan; Zhang, Zeyu; Wan, Yating; Liu, Songtao; Shang, Chen; Herrick, Robert W.; Chow, Weng W.; Gossard, Arthur C.; Bowers, John E. |
2020-09-01 | Effect of p-doping on he intensity noise of epitaxial quantum dot lasers on silicon | Duan, Jianan; Zhou, Yueguang; Dong, Bozhang; Huang, Heming; Norman, Justin C.; Jung, Daehwan; Zhang, Zeyu; Wang, Cheng; Bowers, John E.; Grillot, Frederic |
2020-02 | Epitaxial integration of high-performance quantum-dot lasers on silicon | Norman, Justin C.; Bowers, John E.; Wan, Yating; Zhang, Zeyu; Shang, Chen; Selvidge, Jennifer G.; Dumont, Mario; Kennedy, M. J.; Jung, Daehwan; Duan, Jianan; Huang, Heming; Herrick, Robert W.; Grillot, Frederic; Gossard, Arthur C.; Liu, Songtao |
2020-02 | High-performance mode-locked lasers on silicon | Liu, Songtao; Bowers, John; Norman, Justin C.; Jung, Daehwan; Dumont, Mario; Shang, Chen; Wan, Yating; Kennedy, M. J.; Dong, Bozhang; Auth, Dominik; Breuer, Stefan; Grillot, Frederic; Chow, Weng; Gossard, Arthur; Wu, Xinru |
2019-11 | Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications | Zhang, Zeyu; Jung, Daehwan; Norman, Justin C.; Chow, Weng W.; Bowers, John E. |
2019-12 | The Importance of p-Doping for Quantum Dot Laser on Silicon Performance | Norman, Justin C.; Zhang, Zeyu; Jung, Daehwan; Shang, Chen; Kennedy, M. J.; Dumont, Mario; Herrick, Robert W.; Gossard, Arthur C.; Bowers, John E. |