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Showing results 1 to 6 of 6

Issue Date	Title	Author(s)
2021-05-06	Comparison of high-k Y2O3/TiO2 bilayer and Y-doped TiO2 thin films on Ge substrate	Kim, Dong Gun; Kim, Hae-Ryoung; Kwon, Dae Seon; Lim, Junil; Seo, Haengha; Kim, Tae Kyun; Paik, Heewon; Lee, Woongkyu; Hwang, Cheol Seong
2023-08	Enhancing the Crystallization and Properties of the SrRuO3 Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO2 through Al Substitution	Lim, Junil; Ye, Kun Hee; Kwon, Dae Seon; Seo, Haengha; Kim, Tae Kyun; Paik, Heewon; Shin, Jong Hoon; Song, Haewon; Jang, Yoon Ho; Kang, Sukin; Choi, Jung-Hae; Hwang, Cheol Seong
2023-08	Improving the Properties of SrRuO3 Electrode Films Grown by Atomic Layer-Deposited SrO and Pulsed Chemical Vapor-Deposited RuO2 Using Al2O3 Capping Layers	Lim, Junil; Kwon, Dae Seon; Seo, Haengha; Kim, Tae Kyun; Paik, Heewon; Shin, Jonghoon; Song, Haewon; Jang, Yoon Ho; Park, Yu-kyung; Lee, Keonuk; Kim, Young Sin; Choi, Jung-Hae; Hwang, Cheol Seong
2024-10	Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO2 thin films	Shin, Jonghoon; Shin, Dong Hoon; Kim, Kyung Do; Seo, Haengha; Ye, Kun Hee; Jeon, Jeong Woo; Kim, Tae Kyun; Paik, Heewon; Song, Haewon; Lee, Suk Hyun; Choi, Jung-Hae; Hwang, Cheol Seong
2022-07	The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors	Seo, Haengha; Yeu, In Won; Kwon, Dae Seon; Kim, Dong Gun; Lim, Junil; Kim, Tae Kyun; Paik, Heewon; Choi, Jung-Hae; Hwang, Cheol Seong
2024-04	Understanding phase evolution of ferroelectric Hf0.5Zr0.5O2 thin films with Al2O3 and Y2O3 inserted layers	Shin, Jonghoon; Seo, Haengha; Ye, Kun Hee; Jang, Yoon Ho; Kwon, Dae Seon; Lim, Junil; Kim, Tae Kyun; Paik, Heewon; Song, Haewon; Kim, Ha Ni; Byun, Seungyong; Shin, Seong Jae; Kim, Kyung Do; Lee, Yong Bin; Lee, In Soo; Choi, Jung-Hae; Hwang, Cheol Seong

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