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Showing results 1 to 12 of 12

Issue DateTitleAuthor(s)
2019-12A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlatticesPark, Min Hyuk; Kim, Han Joon; Lee, Gwangyeob; Park, Jaehong; Lee, Young Hwan; Kim, Yu Jin; Moon, Taehwan; Kim, Keum; Hyun, Seung Dam; Park, Hyun Woo; Chang, Hye Jung; Choi, Jung-Hae; Hwang, Cheol Seong
2024-11A fluorite-structured HfO2/ZrO2/HfO2 superlattice based self-rectifying ferroelectric tunnel junction synapseLee, Dong Hyun; Kim, Ji Eun; Cho, Yong Hyeon; Kim, Sojin; Park, Geun Hyeong; Choi, Hyojun; Lee, Sun Young; Kwon, Taegyu; Kim, Da Hyun; Jeong, Moonseek; Jeong, Hyun Woo; Lee, Younghwan; Lee, Seung-Yong; Yoon, Jung Ho; Park, Min Hyuk
2016-02Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitorsSong, Seul Ji; Kim, Yu Jin; Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Moon, Taehwan; Do Kim, Keum; Choi, Jung-Hae; Chen, Zhihui; Jiang, Anquan; Hwang, Cheol Seong
2024-06Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin FilmsCho, Jung Woo; Song, Myeong Seop; Choi, In Hyeok; Go, Kyoung-June; Han, Jaewoo; Lee, Tae Yoon; An, Chihwan; Choi, Hyung-Jin; Sohn, Changhee; Park, Min Hyuk; Baek, Seung-Hyub; Lee, Jong Seok; Choi, Si-Young; Chae, Seung Chul
2022-02Effects of oxygen sources on properties of atomic-layer-deposited ferroelectric hafnium zirconium oxide thin filmsCho, Ah-Jin; Jeon, Ji Hoon; CHUNG, HONG KEUN; Baek, In hwan; Yang, Kun; Park, Min Hyuk; BAEK, SEUNG HYUB; Kim, Seong Keun
2023-08Examination of Ferroelectric FET for "Cold" Nonvolatile MemoryKuk, Song-Hyeon; Han, Seung-Min; Kim, Bong Ho; Kim, Joon Pyo; Kim, Seong-Kwang; Ahn, Seung-Yeop; Park, Min Hyuk; Han, Jae-Hoon; Kim, Sang-Hyeon
2016-01-08Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer StructureKim, Yu Jin; Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Jeon, Woojin; Moon, Taehwan; Do Kim, Keum; Jeong, Doo Seok; Yamada, Hiroyuki; Hwang, Cheol Seong
2023-01Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall PolarizationKuk, Song-Hyeon; Han, Seungmin; Lee, Dong Hyun; Kim, Bong Ho; Shim, Joonsup; Park, Min Hyuk; Han, Jae-Hoon; Kim, Sang-Hyeon
2023-08Roadmap on ferroelectric hafnia- and zirconia-based materials and devicesSilva, Jose P. B.; Alcala, Ruben; Avci, Uygar E.; Barrett, Nick; Begon-Lours, Laura; Borg, Mattias; Byun, Seungyong; Chang, Sou-Chi; Cheong, Sang-Wook; Choe, Duk-Hyun; Coignus, Jean; Deshpande, Veeresh; Dimoulas, Athanasios; Dubourdieu, Catherine; Fina, Ignasi; Funakubo, Hiroshi; Grenouillet, Laurent; Gruverman, Alexei; Heo, Jinseong; Hoffmann, Michael; Hsain, H. Alex; Huang, Fei-Ting; Hwang, Cheol Seong; Iniguez, Jorge; Jones, Jacob L.; Karpov, Ilya V.; Kersch, Alfred; Kwon, Taegyu; Lancaster, Suzanne; Lederer, Maximilian; Lee, Younghwan; Lomenzo, Patrick D.; Martin, Lane W.; Martin, Simon; Migita, Shinji; Mikolajick, Thomas; Noheda, Beatriz; Park, Min Hyuk; Rabe, Karin M.; Salahuddin, Sayeef; Sanchez, Florencio; Seidel, Konrad; Shimizu, Takao; Shiraishi, Takahisa; Slesazeck, Stefan; Toriumi, Akira; Uchida, Hiroshi; Vilquin, Bertrand; Xu, Xianghan; Ye, Kun Hee; Schroeder, Uwe
2023-12Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxideLee, Jaewook; Yang, Kun; Kwon, Ju Young; Kim, Ji Eun; Han, Dong In; Lee, Dong Hyun; Yoon, Jung Ho; Park, Min Hyuk
2024-09Stochastic artificial neuron based on Ovonic Threshold Switch (OTS) and its applications for Restricted Boltzmann Machine (RBM)Im, Seongil; Hwang, Jingyeong; Jeong, Jae-Seung; Lee, Hyejin; Park, Min Hyuk; Cho, Jeong Ho; Ju, Hyunsu; Lee, Suyoun
2012-12-07Strain evolution of each type of grains in poly-crystalline (Ba,Sr)TiO3 thin films grown by sputteringPark, Woo Young; Park, Min Hyuk; Lee, Jong Ho; Yoon, Jung Ho; Han, Jeong Hwan; Choi, Jung-Hae; Hwang, Cheol Seong
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