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Showing results 1 to 2 of 2

Issue DateTitleAuthor(s)
2024-01A Back-Illuminated SPAD Fabricated With 40 nm CMOS Image Sensor Technology Achieving Near 40% PDP at 940 nmEun sung Park; Ha, Won-Yong; Sung, Park Hyo; Eom Do Yoon; Choi, Hyun Seung; Ahn, Daehwan; Choi, Woo-Young; Lee, Myung-Jae
2024-01SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDPWon-Yong Ha; Eun sung Park; Eom Do Yoon; Sung, Park Hyo; Gramuglia, Francesco; Keshavarzian, Pouyan; Kizilkan, Ekin; Bruschini, Claudio; Chong, Daniel; Tan, Shyue Seng; Tng, Michelle; Quek, Elgin; Charbon, Edoardo; Choi, Woo-Young; Lee, Myung-Jae
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