Showing results 1 to 8 of 8
Issue Date | Title | Author(s) |
---|---|---|
2014-07-28 | Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors | Kim, SangHyeon; Ikku, Yuki; Yokoyama, Masafumi; Nakane, Ryosho; Li, Jian; Kao, Yung-Chung; Takenaka, Mitsuru; Takagi, Shinichi |
2019-05 | Equivalent oxide thickness scaling for efficient III-V/Si hybrid MOS optical phase shifter | Li, Qiang; Han, Jae-Hoon; Takenaka, Mitsuru; Takagi, Shinichi; Lee, Tsung-En |
2014-06-30 | Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors | Kim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi |
2014-05 | High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and V-th Tunability | Kim, Sang-Hyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi |
2015-06 | III-V/Ge channel MOS device technologies in nano CMOS era | Takagi, Shinichi; Zhang, Rui; Suh, Junkyo; Kim, Sang-Hyeon; Yokoyama, Masafumi; Nishi, Koichi; Takenaka, Mitsuru |
2018-03 | Low-crosstalk, low-power Mach-Zehnder interferometer optical switch based on III-V/Si hybrid MOS phase shifter | Li, Qiang; Han, Jae-Hoon; Takenaka, Mitsuru; Takagi, Shinichi; Ho, Chong Pei |
2014-03-17 | Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation | Kim, SangHyeon; Yokoyama, Masafumi; Ikku, Yuki; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi |
2018-07 | Semiconductor-insulator-semiconductor (SIS) structures for high-performance optical modulation | Han, Jae-Hoon; Takenaka, Mitsuru; Takagi, Shinichi |