Browsing byAuthorTakenaka, Mitsuru

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Showing results 1 to 8 of 8

Issue DateTitleAuthor(s)
2014-07-28Direct wafer bonding technology for large-scale InGaAs-on-insulator transistorsKim, SangHyeon; Ikku, Yuki; Yokoyama, Masafumi; Nakane, Ryosho; Li, Jian; Kao, Yung-Chung; Takenaka, Mitsuru; Takagi, Shinichi
2019-05Equivalent oxide thickness scaling for efficient III-V/Si hybrid MOS optical phase shifterLi, Qiang; Han, Jae-Hoon; Takenaka, Mitsuru; Takagi, Shinichi; Lee, Tsung-En
2014-06-30Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistorsKim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi
2014-05High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and V-th TunabilityKim, Sang-Hyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi
2015-06III-V/Ge channel MOS device technologies in nano CMOS eraTakagi, Shinichi; Zhang, Rui; Suh, Junkyo; Kim, Sang-Hyeon; Yokoyama, Masafumi; Nishi, Koichi; Takenaka, Mitsuru
2018-03Low-crosstalk, low-power Mach-Zehnder interferometer optical switch based on III-V/Si hybrid MOS phase shifterLi, Qiang; Han, Jae-Hoon; Takenaka, Mitsuru; Takagi, Shinichi; Ho, Chong Pei
2014-03-17Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxationKim, SangHyeon; Yokoyama, Masafumi; Ikku, Yuki; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi
2018-07Semiconductor-insulator-semiconductor (SIS) structures for high-performance optical modulationHan, Jae-Hoon; Takenaka, Mitsuru; Takagi, Shinichi

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