Showing results 1 to 4 of 4
Issue Date | Title | Author(s) |
---|---|---|
2006-08 | Characterization of In0.5Ga0.5As quantum dot infrared photodetector (QDIP) structures treated with post-growth processes | Lim, J. Y.; Nam, H. D.; Song, J. D.; Choi, W. J.; Lee, J. I.; Yang, H. S. |
2010-02 | Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate | Lim, J. Y.; Song, J. D.; Choi, W. J.; Yang, H. S. |
2006-05 | Energy states in InAs-GaAs quantum dots-in-asymmetric-well infrared photodetector structure | Nam, H. D.; Doyennette, L.; Song, J. D.; Choi, W. J.; Yang, H. S.; Lee, J. I.; Julien, F. H. |
2011-09 | Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots | Lim, J. Y.; Song, J. D.; Choi, W. J.; Ahn, J. P.; Yang, H. S. |