| - | Characteristics of InAs quantum dot superluminescent diodes utilizing trench structures | Youngchae, Yoo; Han, Il Ki; Lee, Jung Il; 이주인; 김은규 |
| - | Comparison of optical gain and α-factor in laser diodes having different quantum dot structures | Kim Kyoung Chan; Youngchae, Yoo; J. H. Jung; Han, Il Ki; Lee, Jung Il; D. H. Kim; T.G. Kim |
| - | Investigation of linewidth enhancement factor for two types of quantum dot laser diode | Kim Kyoung Chan; Youngchae, Yoo; Jung Jung Hwa; Jeong Jin Wook; Han, Il Ki; Lee, Jung Il; Dong Ho Kim; Tae Geun Kim |
| - | Optical gain and α-factor in InAs quantum dot laser diodes | Kim Kyoung Chan; T.G. Kim; Han, Il Ki; Youngchae, Yoo; Lee, Jung Il |
| - | Optical properties of J-shape ridge waveguide with trench structure for superluminescent diode using InAs/InGaAs quantum-dot active layer | Youngchae, Yoo; Kim Kyoung Chan; Yoon Hong; Jung Jung Hwa; Jeong Jin Wook; Lee, Jung Il; Gik-Ho Kim; Han, Il Ki |
| - | Study on optical properties of InAs/InGaAs five-stacked quantum-dot laser diode using reactive ion etching | Youngchae, Yoo; Yoon Hong; Kim Kyoung Chan; Jeong Jin Wook; Lee, Jung Il; Gil-Ho Kim; Han, Il Ki |
