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Characteristics of InAs quantum dot superluminescent diodes utilizing trench structures

Authors

Youngchae, Yoo; Han, Il Ki; Lee, Jung Il; 이주인; 김은규

Citation

ISDRS

Keywords

양자점; 고휘도 발광소자; trench structure; semiconductors

URI

https://pubs.kist.re.kr/handle/201004/100513

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KIST Conference Paper > Others

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