Showing results 1 to 4 of 4
Issue Date | Title | Author(s) |
---|---|---|
- | Epitaxial growth of strained germanium using InxAl1-xAs buffer layer | KIM HANSUNG; Shim Jae-Phil; Ju, Gunwu; LIM HEEJEONG; kim seong kwang; Sanghyeon Kim; Kim Hyung-jun |
- | Growth temperature dependent Ge epitaxy on GaAs(100) substrate | LIM HEEJEONG; Shim Jae-Phil; Ju, Gunwu; KIM HANSUNG; kim seong kwang; Sanghyeon Kim; Kim Hyung-jun |
- | Thin body n- and p-GaAs FET on Si for CMOS integration | Shim Jae Phil; Ju, Gunwu; kim seong kwang; KIM HANSUNG; Sanghyeon Kim; Kim Hyung-jun |
- | Thin body p-GaAs junctionless FET on Si via wafer bonding and epitaxial lift-off technology | Shim Jae-Phil; Ju, Gunwu; KIM HANSUNG; kim seong kwang; LIM HEEJEONG; Sanghyeon Kim; Kim Hyung-jun |