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Showing results 1 to 3 of 3

Issue DateTitleAuthor(s)
2024-01A Back-Illuminated SPAD Fabricated With 40 nm CMOS Image Sensor Technology Achieving Near 40% PDP at 940 nmEun sung Park; Ha, Won-Yong; Sung, Park Hyo; Eom Do Yoon; Choi, Hyun Seung; Ahn, Daehwan; Choi, Woo-Young; Lee, Myung-Jae
2019-09First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS TechnologyLee, Myung-Jae; Sun, Pengfei; Pandraud, Gregory; Bruschini, Claudio; Charbon, Edoardo
2024-01SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDPWon-Yong Ha; Eun sung Park; Eom Do Yoon; Sung, Park Hyo; Gramuglia, Francesco; Keshavarzian, Pouyan; Kizilkan, Ekin; Bruschini, Claudio; Chong, Daniel; Tan, Shyue Seng; Tng, Michelle; Quek, Elgin; Charbon, Edoardo; Choi, Woo-Young; Lee, Myung-Jae
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