| 2013-01 | A Pathway to Type-I Band Alignment in Ge/Si Core-Shell Nanowires | Kim, Jongseob; Lee, Jung Hoon; Hong, Ki-Ha |
| 2019-05-22 | Application of Hexagonal Boron Nitride to a Heat-Transfer Medium of an InGaN/GaN Quantum-Well Green LED | Choi, Ilgyu; Lee, Kwanjae; Lee, Cheul-Ro; Lee, Joo Song; Kim, Soo Min; Jeong, Kwang-Un; Kim, Jin Soo |
| 2017-07 | Ballistic Spin Hall Transistor Using a Heterostructure Channel and Its Application to Logic Devices | Choi, Won Young; Kim, Hyung-Jun; Chang, Joonyeon; Han, Suk Hee; Koo, Hyun Cheol |
| 2004-09 | Dependence of the intermixing in InGaAs/InGaAsP quantum well on capping layers | Choi, WJ; Yi, HT; Lee, JI; Woo, DH |
| - | Dependence of the intermixing of InGaAs/InGaAsP quantum well on NH₃ flow rate for the growth of SiNx capping layer | Choi, Won Jun; H. T Yi; Woo, Deok Ha; Lee, Jung Il |
| 2011-04-01 | Detection of Rashba field using a rotational applied field | Jang, Hyun Cheol; Park, Youn Ho; Koo, Hyun Cheol; Kim, Hyung-jun; Chang, Joonyeon; Kim, Hijung |
| - | Detection wavelength tuning of infrared-photodetector by thermal treatment of AlGaAs/GaAs | S. H. Hwang; Shin, Jae Cheol; Choi, Won Jun; Y. M. Park; SONG, JIN-DONG; Park, Young Ju; Han, Il Ki; Cho, Woon Jo; Lee, Jung Il; H. Han |
| 2003-02 | Effects of the thickness of dielectric capping layer and the distance of quantum wells from the sample surface on the intermixing of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering | Yu, JS; Song, JD; Lee, YT; Lim, H |
| - | Effects of thermal annealing on optical and structural properties of 1.3 ㎛ digital-alloy InGaAlAs MQW | SONG, JIN-DONG; Kim Jong Min; S. J. Bae; Y. T. Lee; P. Offermans; P. Koenraad; J. Wolter |
| - | Electrical spin injection and detection into In53Ga47As and InAs quantum well structure | Park Youn-Ho; Lee, Tae-young; 김경호; Kim Hyung-jun; Koo, Hyun Cheol; Chang, Joonyeon; Han, Suk Hee |
| 2011-04-29 | Electrically driven singularity and control of carrier spin of a hybrid quantum well | Moon, Pilkyung; Choi, Won Jun; Lee, J. D. |
| - | Experimental and theoretical analysis of detection wavelength tuning in quantum well infrared-photodetector by quantum well intermixing technique | S. H. Hwang; Shin, Jae Cheol; Choi, Won Jun; Han, Il Ki; SONG, JIN-DONG; Lee, Jung Il; H. Han |
| 2004-12 | High power laser diodes/superluminescent diodes | Han, IK |
| - | In/Ga inter-diffusion in InAs quantum dot in InGaAs/GaAs asymmertic quamtum well | M. Hassan Abdellatif; SONG, JIN-DONG; Choi, Won Jun; Nam Ki Cho; Lee, Jung Il |
| 2005-01-10 | Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window | Choi, WK; Kim, DG; Choi, YW; Lee, S; Woo, DH; Kim, SH |
| - | Manipulation of electric field induced spin-orbit interaction parameter in double-sided doped InAs and In0.53Ga0.47As quantum well structures | 김경호; Kim Hyung-jun; Park Youn-Ho; Koo, Hyun Cheol; Chang, Joonyeon; Han, Suk Hee |
| 1989-06 | MOCVD 법에 의하여 성장한 GaAs/AlGaAs 초격자 및 고립된 양자우물 구조의 특성평가 . | 김용; 김무성; 엄경숙; 민석기 |
| 1997-03-10 | Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing | Yuan, S; Kim, Y; Jagadish, C; Burke, PT; Gal, M; Zou, J; Cai, DQ; Cockayne, DJH; Cohen, RM |
| - | Observation of spin transport in an InAs-based quantum well layer at room temperature | Koo, Hyun Cheol; Jae Hyun Kwon; Chang, Joonyeon; Han, Suk Hee |
| 2002-09 | Optical properties of InGaN/GaN multiple quantum wells | Lee, JI; Lee, CM; Leem, JY; Lim, KS; Han, IK |
| 1993-02 | Properties of center and edge δ-doped GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition | Kim, Y.; Kim, M.-S.; Min, S.-K. |
| 2011-08 | Quantum dot-like effect in InGaAs/GaAs quantum well | Abdellatif, M. H.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I. |
| - | Quantum well disordering of low temperature grown GaAs capped multiple quantum well with SiO//2 capping layer | Choi Won Jun; 한상민; I. Shah; CHOI SUKGEUN; Lee Seok; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM |
| 2011-05-16 | Quantum well thickness dependence of Rashba spin-orbit coupling in the InAs/InGaAs heterostructure | Lee, Tae Young; Chang, Joonyeon; Hickey, Mark C.; Koo, Hyun Cheol; Kim, Hyung-jun; Han, Suk Hee; Moodera, Jagadeesh S. |
| - | Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing Si-rich SiN capping layer for dielectric cap quantum well disordering | Choi Won Jun; KIM HWE JONG; 한상민; Syed ljaz Shah; CHOI SUKGEUN; Lee Seok; Woo Deok Ha; Han Il Ki; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM |
| - | Si-rich SiN를 이용한 GaAs/AlGaAs 다층 양자 우물에서 Al-Ga 상호 확산의 감소 | Choi Won Jun; 한상민; Syed ljaz Shah; CHOI SUKGEUN; Woo Deok Ha; Han Il Ki; KIM HWE JONG; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM |
| 2003-02 | Spectral response change in a quantum well infrared photodetector by using quantum well intermixing | Shin, JC; Choi, WJ; Han, IK; Park, YJ; Lee, JI; Kim, HJ; Choi, JW; Kim, EK |
| 2018-03 | Suppressing nonradiative recombination in crown-shaped quantum wells | Ju, Gunwu; Na, Byung Hoon; Park, Kwangwook; Hwang, Hyeong-Yong; Jho, Young-Dahl; Myoung, NoSoung; Yim, Sang-Youp; Kim, Hyung-jun; Lee, Yong Tak |
| - | (Undefined) | 한상민; Woo Deok Ha; Lee Seok; Choi Won Jun; Kim Sun Ho; KANG KWANG NHAM; 조제원 |
