KIST Library Institutional Repository

Dependence of the intermixing of InGaAs/InGaAsP quantum well on NH₃ flow rate for the growth of SiNx capping layer

Authors

Choi, Won Jun; H. T Yi; Woo, Deok Ha; Lee, Jung Il

Citation

The First International Symposium on Future Issues in Nano-optoelectronics, pp.74 - 78

Keywords

quantum well; intermixing; flow rate; capping layer; impurity free impurity free

URI

https://pubs.kist.re.kr/handle/201004/106000

Appears in Collections:

KIST Conference Paper > Others

Files in This Item:

There are no files associated with this item.

Export

RIS (EndNote)

XLS (Excel)

XML