| 2010-02-22 | Controllability of threshold voltage in Ag-doped ZnO nanowire field effect transistors by adjusting the diameter of active channel nanowire | Kim, Kyoungwon; Debnath, Pulak Chandra; Park, Dong-Hoon; Kim, Sangsig; Lee, Sang Yeol |
| 2009-05 | Electrical Properties of Ti/Al Ohmic Contacts to Sulfur-Passivated N-Face n-Type GaN for Vertical-Structure Light-Emitting Diodes | Jung, Se-Yeon; Seong, Tae-Yeon; Kim, Hyunsoo; Park, Kyung-Soo; Park, Jae-Gwan; Namgoong, Gon |
| 2008-12-29 | Gas sensing properties of defect-controlled ZnO-nanowire gas sensor | Ahn, M. -W.; Park, K. -S.; Heo, J. -H.; Park, J. -G.; Kim, D. -W.; Choi, K. J.; Lee, J. -H.; Hong, S. -H. |
| 2009-04 | Highly Transparent InGaZnO4 Thin Film Transistors Using Indium-Doped ZnO Electrodes on Plastic Substrate | Kim, Dong Hun; Cho, Nam Gyu; Kim, Ho-Gi; Kim, Il-Doo |
| 2009-03 | Improved optical and electrical properties of rf sputtered Al doped ZnO films on polymer substrates by low-damage processes | Min, Hyung Seob; Yang, Min Kyu; Lee, Jeon-Kook |
| 2010-06-14 | Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration | Chang, Seongpil; Dong, Ki-Young; Park, Jung-Ho; Oh, Tae-Yeon; Kim, Jong-Woo; Lee, Sang Yeol; Ju, Byeong-Kwon |
