Gas sensing properties of defect-controlled ZnO-nanowire gas sensor
- Authors
- Ahn, M. -W.; Park, K. -S.; Heo, J. -H.; Park, J. -G.; Kim, D. -W.; Choi, K. J.; Lee, J. -H.; Hong, S. -H.
- Issue Date
- 2008-12-29
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.93, no.26
- Abstract
- The effect of oxygen-vacancy-related defects on gas-sensing properties of ZnO-nanowire gas sensors was investigated. Gas sensors were fabricated by growing ZnO nanowires bridging the gap between two prepatterned Au catalysts. The sensor displayed fast response and recovery behavior with a maximum sensitivity to NO2 gas at 225 degrees C. Gas sensitivity was found to be linearly proportional to the photoluminescence intensity of oxygen-vacancy-related defects in both as-fabricated and defect-controlled gas sensors by postannealing in Ar and H-2 atmosphere. This result agrees well with previous theoretical prediction that oxygen vacancies play a role of preferential adsorption sites for NO2 molecules.
- Keywords
- THIN-FILMS; NO2; EMISSION; FIELD; THIN-FILMS; NO2; EMISSION; FIELD; adsorption; annealing; catalysts; gas sensors; gold; II-VI semiconductors; nanotechnology; nanowires; photoluminescence; vacancies (crystal); wide band gap semiconductors; zinc compounds
- ISSN
- 0003-6951
- URI
- https://pubs.kist.re.kr/handle/201004/132868
- DOI
- 10.1063/1.3046726
- Appears in Collections:
- KIST Article > 2008
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.