Gas sensing properties of defect-controlled ZnO-nanowire gas sensor

Authors
Ahn, M. -W.Park, K. -S.Heo, J. -H.Park, J. -G.Kim, D. -W.Choi, K. J.Lee, J. -H.Hong, S. -H.
Issue Date
2008-12-29
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.93, no.26
Abstract
The effect of oxygen-vacancy-related defects on gas-sensing properties of ZnO-nanowire gas sensors was investigated. Gas sensors were fabricated by growing ZnO nanowires bridging the gap between two prepatterned Au catalysts. The sensor displayed fast response and recovery behavior with a maximum sensitivity to NO2 gas at 225 degrees C. Gas sensitivity was found to be linearly proportional to the photoluminescence intensity of oxygen-vacancy-related defects in both as-fabricated and defect-controlled gas sensors by postannealing in Ar and H-2 atmosphere. This result agrees well with previous theoretical prediction that oxygen vacancies play a role of preferential adsorption sites for NO2 molecules.
Keywords
THIN-FILMS; NO2; EMISSION; FIELD; THIN-FILMS; NO2; EMISSION; FIELD; adsorption; annealing; catalysts; gas sensors; gold; II-VI semiconductors; nanotechnology; nanowires; photoluminescence; vacancies (crystal); wide band gap semiconductors; zinc compounds
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/132868
DOI
10.1063/1.3046726
Appears in Collections:
KIST Article > 2008
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