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Issue Date | Title | Author(s) |
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2001-02-12 | Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition | Kim, Y; Park, KH; Chung, TH; Bark, HJ; Yi, JY; Choi, WC; Kim, EK; Lee, JW; Lee, JY |
2001-03 | Size control of InAs quantum dots on 2 degrees-off GaAs (100) substrate by the thickness of GaAs buffer layer | Kim, HJ; Park, YJ; Kim, EK; Kim, TW |
2001-06 | Effects of substrate orientation, temperature, and hole concentration on the bandgap energy of carbon-doped GaAs | Cho, S; Kim, EK |
2001-04 | Dependence of buffer layer on the distribution of InAs quantum dots | Kim, HJ; Park, YJ; Min, BD; Hyon, CK; Park, SK; Kim, EK; Kim, TW |
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Kim, HJ
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Kim, TW
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Park, YJ
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Bark, HJ
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Cho, S
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Choi, WC
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Chung, TH
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Hyon, CK
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Kim, Y
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Lee, JW