| 2004-10-15 | Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy | Song, JD; Park, YM; Shin, JC; Lim, JG; Park, YJ; Choi, WJ; Han, IK; Lee, JI; Kim, HS; Park, CG |
| 2004-07 | Optical studies of self-assembled InGaAs/GaAs quantum dot structures drown by atomic layer epitaxy | Rho, H; Song, JD; Park, YJ; Choi, WJ; Lee, JI |
| 2004-07 | Electrical characterization of InAs/GaAs quantum-dot infrared photodiodes | Park, HK; Kim, EK; Lee, CH; Song, JD; Choi, WJ; Park, YJ; Lee, JI |
| 2004-12 | Spatially-resolved optical studies on intermixing of InGaAs quantum-dot laser structures by using an AlAs native oxide and thermal annealing | Kwon, BJ; Hwang, JS; Cho, YH; Cho, NK; Jeon, HS; Song, JD; Choi, WJ; Lee, JI; Rho, H |
| 2004-09 | Dependence of the intermixing in InGaAs/InGaAsP quantum well on capping layers | Choi, WJ; Yi, HT; Lee, JI; Woo, DH |
| 2004-10-01 | MBE growth and optical properties of digital-alloy 1.55 mu m multi-quantum wells | Song, JD; Choi, WJ; Kim, JM; Chang, KS; Lee, YT |
| 2004-10 | White light emitting silicon nanocrystals as nanophosphor | Lee, S; Cho, WJ; Han, IK; Choi, WJ; Lee, JI |
| 2004-07 | Photoluminescence and electromodulation study of InAs/GaAs quantum dots | Kim, SS; Cheong, H; Song, JD; Park, YM; Shin, JC; Park, YJ; Choi, WJ; Lee, JI |
| 2004-07-05 | Study of optical heterodyne mixing characteristics in an A1lnAs/GalnAs transferred-substrate double heterojunction bipolar transistor | Kwak, NM; Kim, HJ; Kim, HT; Choi, WJ; Cho, K |
| 2004-06-15 | Optical properties of silicon nanoparticles by ultrasound-induced solution method | Lee, S; Cho, WJ; Chin, CS; Han, IK; Choi, WJ; Park, YJ; Song, JD; Lee, JI |
