| 2004-07 | Optical studies of self-assembled InGaAs/GaAs quantum dot structures drown by atomic layer epitaxy | Rho, H; Song, JD; Park, YJ; Choi, WJ; Lee, JI |
| 2004-09 | Strong blue emission from Er3+ doped in AlxGa1-xN | Wakahara, A; Nakanishi, Y; Fujiwara, T; Okada, H; Yoshida, A; Ohshima, T; Kamiya, T; Kim, YT |
| 2004-07 | Carrier dynamics in an InGaAs dots-in-a-well structure formed by atomic-layer epitaxy | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
| 2004-06 | Effect of Al composition on luminescence properties of rare-earth implanted into AlGaN | Yoshida, A; Wakahara, A; Nakanishi, Y; Okada, H; Ohshima, T; Itoh, H; Kim, YT |
| 2004-12 | Red emission from Eu-implanted GaN | Son, CS; Kim, SI; Kim, YH; Kim, YT; Choi, IH; Wakahara, A; Tanoue, H; Ogura, M |
| 2004-09 | Carrier dynamics in the coupled structure of InGaAs quantum dots in a well | Park, YM; Yoo, KH; Park, YJ; Kim, KM; Song, JD; Lee, JI |
| 2004-06-15 | The effect of ZnO homo-buffer layer on ZnO thin films grown on c-Al2O3(0001) by plasma assisted molecular beam epitaxy | Jung, YS; No, YS; Kim, JS; Choi, WK |
| 2004-11-15 | Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing | Park, YM; Park, YJ; Kim, KM; Song, JD; Lee, JI; Yoo, KH; Kim, HS; Park, CG |
| 2004-11 | In situ study of the ZnO-NaCl system during the growth of ZnO nanorods | Baranov, AN; Chang, CH; Shlyakhtini, A; Panin, GN; Kang, TW; Oh, YJ |
| 2004-07 | Electrical characterization of InAs/InP self-assembled quantum dots with InGaAs strain-relief layers | Kim, JS; Kim, EK; Hwang, H; Park, K; Yoon, E; Park, IW |
