Effect of Al composition on luminescence properties of rare-earth implanted into AlGaN
- Authors
- Yoshida, A; Wakahara, A; Nakanishi, Y; Okada, H; Ohshima, T; Itoh, H; Kim, YT
- Issue Date
- 2004-06
- Publisher
- TRANS TECH PUBLICATIONS LTD
- Citation
- ADVANCES IN NONDESTRUCTIVE EVALUATION, PT 1-3, v.270-273, pp.890 - 894
- Abstract
- Effects of alloy composition on PL properties of Eu and Tb implanted nitrides are investigated. Strong red emissions corresponding to the transition from D-5(0) to F-7(i) states in Eu3+ are observed at room temperature. The intensity of Eu-related luminescence increases with increasing the Al composition in AlGaN, while the decay time indicates opposite trend. From the Tb-implanted samples, sharp emissions are observed in the wavelength range of 490-650nm at low-temperature, and the strongest peak is assigned as the transition from D-5(4) to F-7(6) states in Tb3+. The luminescence intensity is increased with increasing the Al composition. Thermal quenching properties are also improved by increasing the Al composition.
- Keywords
- DOPED GAN; ER; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; EMISSION; DOPED GAN; ER; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; EMISSION; group-III nitride; rare-earth impurity; luminescence
- ISSN
- 1013-9826
- URI
- https://pubs.kist.re.kr/handle/201004/137574
- DOI
- 10.4028/www.scientific.net/KEM.270-273.890
- Appears in Collections:
- KIST Article > 2004
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