| 2005-12 | Electronic subband structure in InAs-GaAs quantum dots in an asymmetric-well infrared photodetector structure | Nam, H; Song, JD; Choi, WJ; Lee, JI; Yang, H; Kwack, HS; Cho, YH |
| 2005-08 | Influence of impurity-free vacancy diffusion on the optical and optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells electroabsorption modulator structure | Yu, JS; Song, JD; Lee, YT; Lim, H |
| 2005-07 | Characteristics of thermally treated quantum-dot infrared photodetector | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H; Lee, SW |
| 2005-11-15 | Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy | Kim, HS; Suh, JH; Park, CG; Lee, SJ; Noh, SK; Song, JD; Park, YJ; Choi, WJ; Lee, JI |
| 2005-11-01 | Optical properties of digital-alloy In-0.49(Ga1-zAlz0.51P/GaAs and InGaP/In-0.49(Ga1-zAlz)(0.51)P multi-quantum wells grown by molecular-beam epitaxy | Kim, JM; Park, CY; Lee, YT; Song, JD |
| 2005-11 | Optical and electronic properties in (In0.53Ga0.47As)(1-z)/(In0.52Al0.48As)(z) digital alloys | Woo, JT; Kim, JH; Kim, TW; Song, JD; Park, YJ |
| 2005-10 | A novel type of spin injection barrier in a GaAs based two-dimensional electron gas system | Koo, HC; Yi, HJ; Song, JD; Ko, JB; Chang, J; Han, SH |
| 2005-03 | Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H |
| 2005-03 | Electron-hole separation in InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Song, JD; Lee, JI |
| 2005-01 | Electrical and optical characterization of energy states in self-assembled InAs/GaAs quantum dots with size distribution | Hwang, SH; Lee, JI; Song, JD; Choi, WJ; Han, IK; Chang, SK |
