Optical and electronic properties in (In0.53Ga0.47As)(1-z)/(In0.52Al0.48As)(z) digital alloys

Abstract

The optical and electronic properties in (In0.53Ga0.47As)(1-z)/(In0.52Al0.48As)(z) digital alloys with various compositions grown on InP substrates by using molecular-beam epitaxy were investigated through photoluminescence (PL) measurements and numerical calculations. The electronic subband energy states, the interband transition energies, and the exciton binding energies of (In0.53Ga0.47As)(1-z)/(In0.52Al0.48As)(z) digital alloys and corresponding In0.53Ga0.47As/In0.52Al0.48As single quantum wells were calculated by using a finite difference method, taking into account two band Hamiltonian system. The numerical results for interband transitions of (In0.53Ga0.47As)(1-z)/(In0.52Al0.48As)(z) digital alloys were in reasonable agreement with the excitonic transitions obtained from the PL measurements.