2005-10-03 | Coordinatively induced length control and photoluminescence of W18O49 nanorods | Woo, K; Hong, J; Ahn, JP; Park, JK; Kim, KJ |
2005-12 | Luminescence and VUV excitation characteristics of Eu3+_ or Tb3+_ activated Ca4YO(BO3)(3) | Tian, LH; Mho, S; Yu, BY; Park, HL |
2005-02 | The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD | Park, K; Ahn, E; Jeon, YJ; Cheong, HM; Kim, JS; Kim, EK; Lee, J; Park, YJ; Lee, GD; Yoon, E |
2005-02 | Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier | Jung, SI; Yoon, JJ; Park, HJ; Park, YM; Jeon, MH; Leem, JY; Lee, CM; Cho, ET; Lee, JI; Kim, JS; Son, JS; Kim, JS; Lee, DY; Han, IK |
2005-07 | Photoluminescence analysis of white-light-emitting Si nanoparticles using effective mass approximation method | Lee, S; Cho, WJ; Kim, YD; Kim, EK; Park, JG |
2005-02-01 | Two-dimensional growth of ZnO epitaxial films on c-Al2O3(0001) substrates with optimized growth temperature and low-temperature buffer layer by plasma-assisted molecular beam epitaxy | Jung, YS; Kononenko, O; Kim, JS; Choi, WK |
2005-02 | Evidence of coupling between InAs self-assembled quantum dots in thin GaAs buffer layer | Cho, ET; Lee, HD; Lee, DW; Lee, JI; Jung, SI; Yoon, JJ; Leem, JY; Han, IK |
2005-04 | Three-modal size distribution of self-assembled InAs quantum dots | Lee, CM; Choi, SH; Noh, SK; Lee, JI; Kim, JS; Han, IK |