| 2006-12-15 | MBE growth and optical properties of highly tensile-strained In1-xGaxAs/In-0.52(Ga0.4Al0.6)(0.48)As multi-quantum-wells using digital alloy | Kim, J. M.; Park, C. Y.; Lee, Y. T.; Song, J. D. |
| 2006-11 | Transport property of insulating barrier in a ferromagnet-semiconductor hybrid system | Koo, H. C.; Yi, Hyunjung; Song, J. D.; Chang, Joonyeon; Han, S. H. |
| 2006-11 | Study on the energy-band structure of an InAs/InGaAs/GaAs quantum-dot infrared photodetector structure | Kim, J. S.; Kim, E. K.; Song, J. D.; Choi, W. J.; Lee, J. I. |
| 2006-05 | Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources | Song, J. D.; Choi, W. J.; Lee, J. I.; Kim, J. M.; Chang, K. S.; Lee, Y. T. |
| 2006-05 | Energy states in InAs-GaAs quantum dots-in-asymmetric-well infrared photodetector structure | Nam, H. D.; Doyennette, L.; Song, J. D.; Choi, W. J.; Yang, H. S.; Lee, J. I.; Julien, F. H. |
| 2006-06 | Photoluminescence and Raman studies of an ln(x)Ga(1-x)P quantum wire structure fabricated using lateral composition modulation | Lim, Jung-Ran; Rho, Heesuk; Song, J. D.; Choi, W. J.; Kim, J. M.; Lee, Y. T. |
| 2006-11-01 | Optical characterization of digital alloy In0.49Ga0.51P/In-0.49(Ga0.6Al0.4)(0.51)P multi-quantum-wells grown by molecular beam epitaxy | Kim, J. M.; Park, C. Y.; Lee, Y. T.; Song, J. D. |
| 2006-08 | Characterization of In0.5Ga0.5As quantum dot infrared photodetector (QDIP) structures treated with post-growth processes | Lim, J. Y.; Nam, H. D.; Song, J. D.; Choi, W. J.; Lee, J. I.; Yang, H. S. |
| 2006-10 | Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots | Lee, J. I.; Nam, H. D.; Choi, W. J.; Yu, B. Y.; Song, J. D.; Hong, S. C.; Noh, S. K.; Chovet, A. |
