Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources

Abstract

We report successful growth of high-quality InGaAs/InP double quantum wells (DQWs) with safer and more cost-effective decomposition source molecular beam epitaxy (MBE). The transmission electron microscopy (TEM) images and double crystal X-ray diffraction (TCXD) measurement reveal the formation of abrupt interfaces between InGaAs and InP layers. In the case of optical quality, the line width of 12 K-photoluminescence of the DQWs is 8.2 meV, which is comparable to that of single quantum well grown by MBE with PH3 cracker and more complex instrument (similar to 4meV). (c) 2006 Elsevier B.V. All rights reserved.