| 2011-08-01 | Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering | Chong, Eugene; Chun, Yoon Soo; Kim, Seung Han; Lee, Sang Yeol |
| 2011-08-08 | Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress | Kim, Bosul; Chong, Eugene; Kim, Do Hyung; Jeon, Yong Woo; Kim, Dae Hwan; Lee, Sang Yeol |
| 2011-07 | Effect of oxygen on the threshold voltage of a-IGZO TFT | Chong, Eugene; Chun, Yoon Soo; Kim, Seung Han; Lee, Sang Yeol |
| 2011-12 | Effect of Indium Contents on the Solution-Processed SiInZnO Thin Film Transistors Annealed at Low Temperature | Park, Ki-Ho; Chong, Eugene; Ju, Byeong-Kwon; Lee, Sang Yeol |
| 2011-07 | The relationship between processing parameters and the performance of novel amorphous silicon-indium-zinc oxide thin film transistors | Chong, Eugene; Kim, Seung Han; Cho, Eun Ah; Jang, Gun-Eik; Lee, Sang Yeol |
| 2011-04-29 | Localization effect of a current-path in amorphous In-Ga-Zn-O thin film transistors with a highly doped buried-layer | Chong, Eugene; Jeon, Yong Woo; Chun, Yoon Soo; Kim, Dae Hwan; Lee, Sang Yeol |
| 2011-03-21 | Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor | Lee, Sang Yeol; Kim, Do Hyung; Chong, Eugene; Jeon, Yong Woo; Kim, Dae Hwan |
| 2011-02 | Effect of Trap Density on the Stability of SiInZnO Thin-Film Transistor under Temperature and Bias-Induced Stress | Chong, Eugene; Chun, Yoon Soo; Lee, Sang Yeol |
| 2011-01 | Design of Noncoplanar Diagonal Electrode Structure for Oxide Thin-Film Transistor | Chong, Eugene; Jeon, Yong Woo; Chun, Yoon Soo; Kim, Dae Hwan; Lee, Sang Yeol |
