| 2024-01 | Back-Illuminated Double-Avalanche-Region Single-Photon Avalanche Diode | Park, Eunsung; Eom, Doyoon; Yu, Myeong-Hun; Moon, Yun-Mi; Ahn, Dae-Hwan; Ahn, Jongtae; Hwang, Do Kyung; Choi, Woo-Young; Lee, Myung-Jae |
| 2024-01 | Low-threshold 2 μm InAs/InP quantum dash lasers enabled by punctuated growth | Chu, Rafael Jumar; Laryn, Tsimafei; Ahn, Dae-Hwan; Han, Jae-Hoon; Kim, HoSung; Choi, Won Jun; Jung, Daehwan |
| 2024-06 | Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III-V Quantum Dot Lasers on a Si Substrate | Laryn, Tsimafei; Chu, Rafael Jumar; Kim, Yeonhwa; Madarang, May Angelu; Lung, Quang Nhat Dang; Ahn, Dae-Hwan; Han, Jae-Hoon; Choi, Won Jun; Jung, Daehwan |
| 2024-07 | TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications | Chen, Simin; Ahn, Dae-Hwan; An, Seong Ui; Noh, Tae Hyeon; Kim, Younghyun |
| 2024-09 | Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs | An, Seong Ui; Ahn, Dae-Hwan; Ju, Gijun; Chen, Simin; Ji, Yo Seop; Han, Jae-Hoon; Kim, Jaekyun; Kim, Younghyun |
| 2024-09 | First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 s | Noh, Tae Hyeon; Chen, Simin; Kim, Hyo-Bae; Jin, Taewon; Park, Seoung Min; An, Seong Ui; Sun, Xinkai; Kim, Jaekyun; Han, Jae-Hoon; Ahn, Ji-Hoon; Ahn, Dae-Hwan; Kim, Younghyun |
| 2024-08 | Design Points of InGaAs MFMIS Tunnel FET for Large Memory Window and Stable Ferroelectric Memory Operation | Ko, Kyul; Ahn, Dae-Hwan; Jeong, Jai-Youn; Ju, Byeong-Kwon; Han, Jae-Hoon |
