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Issue Date | Title | Author(s) |
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2001-10-01 | Low-temperature process of (Y0.95,Bi0.05)MnO3 ferroelectric thin film and its structural and electrical properties | Kim, Yong Tae |
2001-10-11 | MFM 구조의 Bi 첨가된 강유전체 YMnO3 박막의 결정구조와 유전특성에 관한 연구 | Kim, Yong Tae |
2001-06-01 | Memory window of metal-ferroelectric-insulator-silicon structures using strained (Ba,Sr)TiO3 film | Kim, Yong Tae |
2001-11-02 | 새로운 열처리법을 통한 SrBi2Ta2O9 박막의 저온 성장 | Kim, Yong Tae |
2001-04-16 | A method of improving dielectric constant and adhesion strength of methysilsesquioxyane by using a NH3 plasma treatment | Kim, Yong Tae |
2001-09-01 | Structure and ferroelectric properties of Bi modified YMnO3 films depostied on Pt electrodes | Kim, Yong Tae |
2001-09-01 | Ferroelectric memory window in strained (Ba0.5, Sr 0.5)TiO3 thin films | Kim, Yong Tae |
2001-10-01 | Effects of Ta2O5 and Al2O3 Buffer Insulators on Electrical Characteristics of Pt/SrBi2Ta2O9/Si Gate Structure | Kim, Yong Tae |
2001-10-01 | Effects of Bi/Sr Stoichiometric Ratio on Electrical Properties of Pt/SrBi2Nb2O9/Si Ferroelectric Gate Structure | Kim, Yong Tae |
2001-07-22 | Fabrication of p-type ZnO thin film by rf-sputtering | Kim, Yong Tae |
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