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A method of improving dielectric constant and adhesion strength of methysilsesquioxyane by using a NH3 plasma treatment

Authors

Kim, Yong Tae

Issue Date

2001-04-16

Citation

, pp.231 - 0

URI

https://pubs.kist.re.kr/handle/201004/83858

Appears in Collections:

KIST Conference Paper > 2001

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