Fabrication of multi-stacked InAs/InGaAs dot-in-a-well structures by metal organic chemical vapour deposition for quantum dot infrared photodetector

Authors
Jungsub KimHa Seung KyuChangjae YangJaeyel LeeChoi, Won JunEuijoon Yoon
Citation
ICPS2010, pp.P1-389
Keywords
InAs/InGaAs dot-in-a-well; MOCVD; quantum dot; infrared detector; photoluminescence; I-V characteristics
URI
https://pubs.kist.re.kr/handle/201004/100131
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KIST Conference Paper > Others
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