DSpace at KIST: Threshold voltage shift of solution processed InGaZnO thin film transistors with indium composition ratio

Full metadata record

DC Field	Value	Language
dc.contributor.author	Park ki ho	-
dc.contributor.author	Lee Deuk-Hee	-
dc.contributor.author	Dong Yun Lee	-
dc.contributor.author	Byeong-Kwon Ju	-
dc.contributor.author	Lee Sang Yeol	-
dc.date.accessioned	2024-01-13T00:06:09Z	-
dc.date.available	2024-01-13T00:06:09Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/100176	-
dc.language	English	-
dc.subject	threshold voltage (Vth)	-
dc.subject	indium-gallium-zinc oxide (IGZO)	-
dc.subject	thin film transistors (TFTs)	-
dc.title	Threshold voltage shift of solution processed InGaZnO thin film transistors with indium composition ratio	-
dc.title.alternative	용액 공정으로 제작된 InGaZnO TFT의 인듐 조성비에 따른 문턱전압 변화	-
dc.type	Conference	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	전기전자재료학회 하계학술대회, pp.3	-
dc.citation.title	전기전자재료학회 하계학술대회	-
dc.citation.startPage	3	-
dc.citation.endPage	3	-
dc.citation.conferencePlace	KO	-

Show Simple Item Record

KIST Library Institutional Repository