DSpace at KISTKIST Conference PaperOthers

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dc.contributor.authorChong Eu Gene-
dc.contributor.authorJo Kyoungchul-
dc.contributor.authorKim Seung Han-
dc.contributor.authorChun Yoon Soo-
dc.contributor.authorLee Sang Yeol-
dc.date.accessioned2024-01-13T00:06:10Z-
dc.date.available2024-01-13T00:06:10Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/100177-
dc.languageEnglish-
dc.subjectoxygen partial pressure-
dc.subjecthafnium-doped-
dc.subjectindium zinc oxide-
dc.subjectbias-stability-
dc.subjectHf-
dc.titleImprovement of bias stability of indium zinc oxide TFTs by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPCPST 2010-
dc.citation.titleAPCPST 2010-
dc.citation.conferencePlaceKO-
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