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dc.contributor.authorOh Juhyun-
dc.contributor.authorChun Daehwan-
dc.contributor.authorLee Eui-Bok-
dc.contributor.authorKim, Young-Hwan-
dc.contributor.authorKIM, CHUN KEUN-
dc.contributor.authorByeong Kwon Ju-
dc.contributor.authorMan Young Sung-
dc.contributor.authorKim, Yong Tae-
dc.date.accessioned2024-01-13T00:06:22Z-
dc.date.available2024-01-13T00:06:22Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/100192-
dc.languageEnglish-
dc.subjectTrench IGBT-
dc.subjectBreakdown voltage-
dc.subjectElectric field distribution-
dc.titleA design of Novel IGBT with Oblique Trench Gate-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation2010 Asia-Pacific Workshop on fundamentals and Applications of Advanced Semiconductor Devices, v.110, no.110, pp.57 - 59-
dc.citation.title2010 Asia-Pacific Workshop on fundamentals and Applications of Advanced Semiconductor Devices-
dc.citation.volume110-
dc.citation.number110-
dc.citation.startPage57-
dc.citation.endPage59-
dc.citation.conferencePlaceJA-
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