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dc.contributor.authorPark Young-wook-
dc.contributor.authorLee Hyun Seok-
dc.contributor.authorHyung-Woo Ahn-
dc.contributor.authorWu Zhe-
dc.contributor.authorLee Suyoun-
dc.contributor.authorJeung-hyun Jeong-
dc.contributor.authorJeong, Doo Seok-
dc.contributor.authorKyung-woo Yi-
dc.contributor.authorCHEONG, BYUNG KI-
dc.date.accessioned2024-01-13T00:31:29Z-
dc.date.available2024-01-13T00:31:29Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/100387-
dc.languageEnglish-
dc.subjectchalcogenide-
dc.subjectGST-
dc.subjectPRAM-
dc.titleThe Effect of Ge Addition on the Operation Characteristics of a Phase-change Memory(PCM) Device Using Ge-doped SbTe-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationMaterials Research Society-
dc.citation.titleMaterials Research Society-
dc.citation.conferencePlaceUS-
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