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dc.contributor.authorJo Kyoungchul-
dc.contributor.authorSeongpil Chang-
dc.contributor.authorChong Eugene-
dc.contributor.authorByeong-kwon Ju-
dc.contributor.authorLee Sang Yeol-
dc.date.accessioned2024-01-13T00:32:51Z-
dc.date.available2024-01-13T00:32:51Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/100486-
dc.languageEnglish-
dc.titleOrigin of hysteresis of a-IGZO transistor with Al2O3/HfO2/Al2O3 gate insulator-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationICAMD 2009-
dc.citation.titleICAMD 2009-
dc.citation.conferencePlaceKO-
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