Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jo Kyoungchul | - |
dc.contributor.author | Seongpil Chang | - |
dc.contributor.author | Chong Eugene | - |
dc.contributor.author | Byeong-kwon Ju | - |
dc.contributor.author | Lee Sang Yeol | - |
dc.date.accessioned | 2024-01-13T00:32:51Z | - |
dc.date.available | 2024-01-13T00:32:51Z | - |
dc.date.created | 2021-09-29 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/100486 | - |
dc.language | English | - |
dc.title | Origin of hysteresis of a-IGZO transistor with Al2O3/HfO2/Al2O3 gate insulator | - |
dc.type | Conference | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | ICAMD 2009 | - |
dc.citation.title | ICAMD 2009 | - |
dc.citation.conferencePlace | KO | - |
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