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dc.contributor.authorJeong, Doo Seok-
dc.contributor.authorLee Suyoun-
dc.contributor.authorJeung-hyun Jeong-
dc.contributor.authorCHEONG, BYUNG KI-
dc.contributor.authorCheol Seong Hwang-
dc.date.accessioned2024-01-13T02:01:02Z-
dc.date.available2024-01-13T02:01:02Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/101158-
dc.languageEnglish-
dc.subjectchalcogenice-
dc.subjectx-ray photoelectron spectroscopy-
dc.subjectinterfacial dipole layer-
dc.subjectGe2Sb2Te5-
dc.titleCharacterization of interface between amorphous Ge2Sb2Te5 and TiN by x-ray photoelectron spectroscopy-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationEuropean|Phase Change and Ovonics Symposium 2009, pp.176 - 180-
dc.citation.titleEuropean|Phase Change and Ovonics Symposium 2009-
dc.citation.startPage176-
dc.citation.endPage180-
dc.citation.conferencePlaceGW-
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