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dc.contributor.authorPark Jae Hyun-
dc.contributor.authorJae Young Song-
dc.contributor.authorJong Pil Kim-
dc.contributor.authorSang Wan Kim-
dc.contributor.authorJeong-Hoon Oh-
dc.contributor.authorKyung-Chang Ryoo-
dc.contributor.authorGa Ram Kim-
dc.contributor.authorHyun Woo Kim-
dc.contributor.authorByung-Gook Park-
dc.date.accessioned2024-01-13T02:03:33Z-
dc.date.available2024-01-13T02:03:33Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/101340-
dc.languageEnglish-
dc.subjectGate-All-Around (GAA)-
dc.subjectlocally formed silicon nanowire-
dc.subjectShort-Channel Effect (SCE)-
dc.subjectinverted sidewall spacers-
dc.subjectreduction method-
dc.subjectself-aligned structure-
dc.titleFabrication and Analysis of the Gate-All-Around (GAA) Structure Silicon Nanowire MOSFET-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEEE 2009 Silicon Nanoelectronics Workshop-
dc.citation.titleIEEE 2009 Silicon Nanoelectronics Workshop-
dc.citation.conferencePlaceJA-
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