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Fabrication and Analysis of the Gate-All-Around (GAA) Structure Silicon Nanowire MOSFET

Authors

Park Jae Hyun; Jae Young Song; Jong Pil Kim; Sang Wan Kim; Jeong-Hoon Oh; Kyung-Chang Ryoo; Ga Ram Kim; Hyun Woo Kim; Byung-Gook Park

Citation

IEEE 2009 Silicon Nanoelectronics Workshop

Keywords

Gate-All-Around (GAA); locally formed silicon nanowire; Short-Channel Effect (SCE); inverted sidewall spacers; reduction method; self-aligned structure

URI

https://pubs.kist.re.kr/handle/201004/101340

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KIST Conference Paper > Others

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