DSpace at KIST: Degradation Mechanism and Curing Method of Phase Change Memory (PCM) Device Characteristics during Cyclic Programming

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DC Field	Value	Language
dc.contributor.author	Lee Suyoun	-
dc.contributor.author	Jeung-hyun Jeong	-
dc.contributor.author	Park Young-wook	-
dc.contributor.author	Wu Zhe	-
dc.contributor.author	LEE, TAEK SUNG	-
dc.contributor.author	CHEONG, BYUNG KI	-
dc.date.accessioned	2024-01-13T03:02:13Z	-
dc.date.available	2024-01-13T03:02:13Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/101774	-
dc.language	English	-
dc.subject	phase change memory	-
dc.subject	reliability	-
dc.subject	field-induced ion migration	-
dc.subject	electromigration	-
dc.title	Degradation Mechanism and Curing Method of Phase Change Memory (PCM) Device Characteristics during Cyclic Programming	-
dc.title.alternative	상변화메모리의 쓰기/지우기 반복에 따른 열화현상의 원인에 대한 연구	-
dc.type	Conference	-
dc.description.journalClass	1	-
dc.identifier.bibliographicCitation	Proceedings of European Phase Change and Ovonic Symposium, pp.188 - 193	-
dc.citation.title	Proceedings of European Phase Change and Ovonic Symposium	-
dc.citation.startPage	188	-
dc.citation.endPage	193	-
dc.citation.conferencePlace	XR	-

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