High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n- doping on InSb/GaAs

Authors
SONG, JIN-DONGKim Hyung-junShin Sang HoonSu youn, Kim
Citation
2008 하계 자기학회
Keywords
InAs; 2DEG; AlSb
URI
https://pubs.kist.re.kr/handle/201004/101964
Appears in Collections:
KIST Conference Paper > Others
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