Role of Al2O3 buffer layer in ZnO-based trransparent thin film transistors with HfO2 gate-insulator

Authors
Seongpil ChangSong, Yong-WonSe-Han LeeLee Sang YeolByeong-Kwon Ju
Citation
IS-TCO 2008, pp.6
Keywords
ZnO-TFT; HfO2; Al2O3; Interfacial layer
URI
https://pubs.kist.re.kr/handle/201004/102210
Appears in Collections:
KIST Conference Paper > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE