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dc.contributor.authorCHEONG, BYUNG KI-
dc.contributor.authorJeung-hyun Jeong-
dc.contributor.authorLee Suyoun-
dc.contributor.authorKim Inho-
dc.contributor.authorWu Zhe-
dc.contributor.authorAhn Hyoung Woo-
dc.contributor.authorKim Seul-Cham-
dc.contributor.authorLEE HYUN SUCK-
dc.contributor.authorPark Young-wook-
dc.date.accessioned2024-01-13T05:31:53Z-
dc.date.available2024-01-13T05:31:53Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/103086-
dc.languageEnglish-
dc.subjectnon-volatile memory-
dc.subjectphase change memory material-
dc.subjectGe-doped SbTe-
dc.subjectnitrogen-
dc.titleCharacteristics of phase change memory devices based on Ge-doped SbTe and its derivative-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationEuporean Phase Change and Ovonics Symposium-
dc.citation.titleEuporean Phase Change and Ovonics Symposium-
dc.citation.conferencePlaceSZ-
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