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Characteristics of phase change memory devices based on Ge-doped SbTe and its derivative

Authors

CHEONG, BYUNG KI; Jeung-hyun Jeong; Lee Suyoun; Kim Inho; Wu Zhe; Ahn Hyoung Woo; Kim Seul-Cham; LEE HYUN SUCK; Park Young-wook

Citation

Euporean Phase Change and Ovonics Symposium

Keywords

non-volatile memory; phase change memory material; Ge-doped SbTe; nitrogen

URI

https://pubs.kist.re.kr/handle/201004/103086

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KIST Conference Paper > Others

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