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dc.contributor.authorDae-Hwan Kang-
dc.contributor.authorKim Inho-
dc.contributor.authorJeung-hyun Jeong-
dc.contributor.authorCHEONG, BYUNG KI-
dc.contributor.authorDong-Ho Ahn-
dc.contributor.authorKi-Bum Kim-
dc.date.accessioned2024-01-13T07:32:09Z-
dc.date.available2024-01-13T07:32:09Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/104170-
dc.languageEnglish-
dc.titleEnhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation2006 NVSMW (Non-Volatile Semiconducting Memory Workshop)-
dc.citation.title2006 NVSMW (Non-Volatile Semiconducting Memory Workshop)-
dc.citation.conferencePlaceUS-
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