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dc.contributor.authorChang Woo Lee-
dc.contributor.authorKim, Yong Tae-
dc.date.accessioned2024-01-13T08:33:12Z-
dc.date.available2024-01-13T08:33:12Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/104772-
dc.languageEnglish-
dc.subjectpulse plasma-
dc.subjectWN-
dc.titleCharacteristics of Cu/PPALD (pulse-plasma atomic layer deposited) WN/methyl silsequioxane/Si for multi-level Cu interconnection-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationThe international conference on electrical engineering 2005 (ICEE2005)-
dc.citation.titleThe international conference on electrical engineering 2005 (ICEE2005)-
dc.citation.conferencePlaceCC-
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