DSpace at KISTKIST Conference PaperOthers

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dc.contributor.authorKim, Yong Tae-
dc.contributor.authorSHIN, SUN IL-
dc.contributor.authorJung Ho Park-
dc.contributor.authorKim, Seong Il-
dc.contributor.authorKwon Young Suk-
dc.date.accessioned2024-01-13T10:03:14Z-
dc.date.available2024-01-13T10:03:14Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/105564-
dc.languageEnglish-
dc.titleCharacteristics of Single Transistor type Ferroelectric Memory Using Pt/SrBi2Ta2O9/Si and Pt/SrBi2Ta2O9/Y2O3/Si Gate Structure-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationInternational Conference on Electroceramics-
dc.citation.titleInternational Conference on Electroceramics-
dc.citation.conferencePlaceFR-
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