DSpace at KIST: Circuit Design and Full Chip Simulation for Single Transistor Type Ferroelectric Random Access Memory

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DC Field	Value	Language
dc.contributor.author	Kim, Seong Il	-
dc.contributor.author	Kim, Yong Tae	-
dc.contributor.author	Kim, Young Hwan	-
dc.contributor.author	SHIN, SUN IL	-
dc.contributor.author	Jung Ho Park	-
dc.date.accessioned	2024-01-13T10:03:20Z	-
dc.date.available	2024-01-13T10:03:20Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/105570	-
dc.language	English	-
dc.title	Circuit Design and Full Chip Simulation for Single Transistor Type Ferroelectric Random Access Memory	-
dc.type	Conference	-
dc.description.journalClass	1	-
dc.identifier.bibliographicCitation	International Conference on Electrical Engineering 2004, v.1, pp.325 - 328	-
dc.citation.title	International Conference on Electrical Engineering 2004	-
dc.citation.volume	1	-
dc.citation.startPage	325	-
dc.citation.endPage	328	-
dc.citation.conferencePlace	JA	-

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