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dc.contributor.authorKim, Yong Tae-
dc.contributor.authorMinsoo Youm-
dc.contributor.authorSHIN, SUN IL-
dc.contributor.authorKim, Seong Il-
dc.date.accessioned2024-01-13T10:03:23Z-
dc.date.available2024-01-13T10:03:23Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/105573-
dc.languageEnglish-
dc.titleReduction of phase changing voltage in Phase change random access memory by using edge contact structure-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationInternational Conference on Electrical Engineering 2004, v.1, pp.20 - 23-
dc.citation.titleInternational Conference on Electrical Engineering 2004-
dc.citation.volume1-
dc.citation.startPage20-
dc.citation.endPage23-
dc.citation.conferencePlaceJA-
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KIST Conference Paper > Others
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