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dc.contributor.authorDae-Hwan Kang-
dc.contributor.authorKIM, TAE-GYUN-
dc.contributor.authorJUNG, HAN-JU-
dc.contributor.authorLEE, TAEK SUNG-
dc.contributor.authorKim In-ho-
dc.contributor.authorLEE, KYEONG SEOK-
dc.contributor.authorKIM, WON MOK-
dc.contributor.authorCHEONG, BYUNG KI-
dc.contributor.authorAHN, DONG-HO-
dc.contributor.authorKWON, MIN-HO-
dc.contributor.authorKWON, HYUK-SOON-
dc.contributor.authorKIM, KI-BUM-
dc.date.accessioned2024-01-13T10:30:42Z-
dc.date.available2024-01-13T10:30:42Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/105669-
dc.languageEnglish-
dc.subjectphase change memory-
dc.titleReduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge1Sb2Te4/TiN cell structure-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation2004 International Conference on Solid State Devices and Materials-
dc.citation.title2004 International Conference on Solid State Devices and Materials-
dc.citation.conferencePlaceJA-
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