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Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge1Sb2Te4/TiN cell structure

Authors

Dae-Hwan Kang; KIM, TAE-GYUN; JUNG, HAN-JU; LEE, TAEK SUNG; Kim In-ho; LEE, KYEONG SEOK; KIM, WON MOK; CHEONG, BYUNG KI; AHN, DONG-HO; KWON, MIN-HO; KWON, HYUK-SOON; KIM, KI-BUM

Citation

2004 International Conference on Solid State Devices and Materials

Keywords

phase change memory

URI

https://pubs.kist.re.kr/handle/201004/105669

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KIST Conference Paper > Others

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