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Structural and optical properties of InGaAs/GaAs quantum dots using atomic layer epitaxy technique for the application of optical communication

Other Titles

광통신 응용을 위하여 원자층성장기법으로 성장된 InGaAs/GaAs 양자점의 구조적 광학적 특성

Authors

SONG, JIN-DONG; Y. M. Park; Shin, Jae Cheol; J. G. Lim; Park, Young Ju; Choi, Won Jun; Han, Il Ki; Cho, Woon Jo; Lee, Jung Il; H. S. Lee; J. Y. Lee

Citation

Proc.of Asia-Pacific Workshop on Fundamentals & Application of Advanced Semiconductor Device AWAD'03, pp.167 - 172

Keywords

InGaAs; GaAs; quantum dots; photoluminescence

URI

https://pubs.kist.re.kr/handle/201004/105932

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KIST Conference Paper > Others

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